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    DSAZIHA2X00039221.pdf by GeneSiC Semiconductor

    • GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS = 10 mΩ ID (Tc = 25°C) = 200 A ID (Tc > 125°C) = 100 A hFE (Tc = 25°C) = 104
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