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    DSAZIHA2X00039225.pdf by GeneSiC Semiconductor

    • GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS = 100 mΩ ID (Tc = 25°C) = 25 A ID (Tc = 150°C) = 10 A hFE (Tc = 25°C) = 98 Pa
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