DSAE0013396.pdf by Infineon Technologies

Partial File Text IPA030N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS · N-channel, normal level 100 V R DS(on),max 3 m ID · Excellent gate charge x R DS(on) produ
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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