DSA00395493.pdf by Hitachi Semiconductor

Partial File Text 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449 1st. Edition Features · Low noise figure NF = 1.0 dB typ. at f = 200 MHz · High gain PG = 27.6 dB typ. at f = 2
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Transferred
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