This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
TOSHIBA
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
MICROWAVE POWER GaAs FET TIM5964-16SL-081
FEATURES
â LOW INTERMODULATION DISTORTION IM3=-45dBc at Po=31.5dBm Single Carrier Level
â HIGH POWE
