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Partial File Text ï»¿TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4SL Features â¢ Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, - Single carrier level â¢ High power - PidB = 36.5 dBm at 7.1 GHz
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