DSAEDA000990.pdf by Toshiba

Partial File Text GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm â¢ Enhancement-mode VGE = 2.5 V (min.) (@IC = 150 A) IC = 150 A (max) â
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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