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    DSA00285436.pdf

    • Renesas Technology
    • RQA0009SXAQS Silicon N-Channel MOS FET REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Features ยท High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS =
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