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DSA2IH00100641.pdf
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MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F X 35V 1 7 2 2 11.7 ~ 12.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 5 V 1 7 2 2 is an internally impedance matched GaAs power F E
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