DSA2IH00102113.pdf by Not Available

Partial File Text MITSUBISHI SEMICONDUCTOR (GaAs FET) FA01219A GaAs FET HYBRID IC DESCRIPTION small size handheld radio. FEATURES · Low voltage · High gain · High efficiency · High power 3.5V 22.5B 50% 30.5
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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