DSA00289093.pdf by Unisonic Technologies

Partial File Text UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE(sat)=0.4V max/IC=3A, IB=0.3A 1 APPLICATION
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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