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DSAH00507973.pdf
by RF Micro Devices
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RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN RFG1M20180 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT Technology Typical Peak Modul
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RFG1M20180SB
RFG1M20180SQ