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    DSASW00135398.pdf

    • -
    • PROCESS CP316V Small Signal Transistors NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Base Bon
    • Original

    DSASW00135398.pdf preview Download Datasheet

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    2N5551 CMPT5551 CP316V CXT5551 CZT5551
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