This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
InGaN-High Brightness Lumineszenzdiode (527 nm, High Power)
InGaN High Brightness Light Emitting Diode (527 nm, High Power)
F 0527B
Vorläufige Daten / Preliminary Data
Wesentliche Merkmale
Fe
Findchips