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    DSA00291589.pdf

    • Cree
    • PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
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    DSA00291589.pdf preview Download Datasheet

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    470PF CGH35030-TB CGH35030F cree rf str 6754 str 6754 circuit STR W 6754

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