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DSA00291590.pdf
by Cree
Partial File Text
PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree's CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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User Tagged Keywords
470PF
CGH40010
CGH40010F
str 6308
str 6353
str 8656
STR A 6169
str g 8656
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