DSA00175083.pdf by Fujitsu

Partial File Text FLK207XV GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 32.5dBm(Typ.) High Gain: G1dB = 6.0dB(Typ.) High PAE: hadd = 27%(Typ.) Proven Reliability Drain Drain Dra
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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876 fujitsu fet general GaAs FET HEMT Chips

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