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    DSAAQ0032428.pdf

    • Infineon Technologies
    • IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175
    • Original

    DSAAQ0032428.pdf preview Download Datasheet

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    600N25N
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