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DSASW00145993.pdf
by Cree
Partial File Text
CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree's CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high
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RoHS
Unknown
Pb Free
Unknown
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User Tagged Keywords
CGH27015
CGH27060
CGH27060F
CGH40045F
tRANSISTOR 2.7 3.1 3.5 GHZ cw