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    DSAE007469.pdf by Infineon Technologies

    • IPI076N12N3 G OptiMOSTM3 Power-Transistor IPP076N12N3 G Product Summary Features V DS 7.6 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on)max · N-ch
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    076N12N IPP076N12N3 G PG-TO220-3
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