DSASW00214388.pdf by IXYS

Partial File Text DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications VDSS Test Conditions VDSS TJ = 25°C to 1
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201N09 DE-150 DE150-201N09A PIN diode SPICE model