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    DSA00300880.pdf

    • Hitachi Semiconductor
    • HE7601SG GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for opti
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    DSA00300880.pdf preview Download Datasheet

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    a 770 C-239 HE7601SG
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