This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
High Perform ance
lM x 16
CMOS DRAM
A S4C 1M 16E 5
1M x 1 6 CMOS EDO DRAM
Preliminary information
Features
⢠1024 refresh cydes, 16 ms refresh interval
⢠Organization: 1,048,576 word