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DSAE0025078.pdf
Manufacturer
Toshiba
Partial File Text
SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications · 4 V drive · Low ON-resistance: Unit: mm Ron = 120 m (max) (@VGS
Datasheet Type
Original
ECAD Model
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SSM3K303T
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