DSAIH00091421.pdf

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Partial File Text GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF (TYP) HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz Lgi = 1
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ECAD Model

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