DSAEDA00038515.pdf by Fairchild Semiconductor

Partial File Text P-Channel Power TrenchÂ® MOSFET -80 V, -2.1 A, 183 mÎ© Features General Description Ì Max rDS(on) = 183 mÎ© at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild S
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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