DSAEDA00038563.pdf by Fairchild Semiconductor

Partial File Text FDC8601 N-Channel Power TrenchÂ® MOSFET 100 V, 2.7 A, 109 mÎ© Features General Description Ì Max rDS(on) = 109 mÎ© at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairch
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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