DSAEDA00038563.pdf by Fairchild Semiconductor
- FDC8601 N-Channel Power Trench® MOSFET 100 V, 2.7 A, 109 mΩ Features General Description Ì Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairch
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