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    • 1. h Silicon Transistor 2SD1001 o ir— Ta K y A o 2SB800 t ? > / > 9 'J ito nms., MhFETt0 PT = 2.0 W (0.7 mm X 16 -y ^fàfëfflfë) Vceo>80 V, hFE =200 TYP. (Ic = 50 mA) (Ta = 25 °C) m
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