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    • =r—S • S/—h Silicon Transistor 2SC3615 a O iHjhFE hFE = 800~3200 @Vce = 5.0 V, Ic = 100 mA OÎâVCE(sat)T-t„ VCE(sat) = 0.11 V TYP. @Ic/IB=100 mA/1.0 mA o®VEB0T"t„ BVEBO > 15 V
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    2SC3615 TC-5845
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