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    •  • h SEC A m^Tixrx M Ï B MOS Field Effect Power Transistor 2SK829 N-^i^U'^-MOS FET Iiffl 2SK829 Ü, N-f * > l-fi^^-MOS FETT":*: DC-DC ¡Kf it OVDSS = 500 V, ID(DC) = 15 A RDS(on)^0.6
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