DSA0031208.pdf by International Rectifier

Partial File Text PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features · Low VCE (on) Non Punch Through IGBT Technology. · Low Diode VF. · 10µs Short Cir
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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10a 400v bipolar transistor C-150 diode 10a 400v IRFI840G IRGIB10B60KD1 transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor

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