DSASW00173299.pdf by Fairchild Semiconductor

Partial File Text P-Channel Power Trench® MOSFET -80 V, -2.1 A, 183 m Features General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semicondu
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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FDC3535 marking 535

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