DSASW00173357.pdf by Fairchild Semiconductor

Partial File Text FDC8601 N-Channel Power Trench® MOSFET 100 V, 2.7 A, 109 m Features General Description Max rDS(on) = 109 m at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Sem
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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