DSASW00248543.pdf

Partial File Text Complementary N-P Channel Trench MOSFET General Description Features N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS(ON) <28m @ VGS = 10V <42m @ VGS = 4.5V The MDS9651 uses advanced MagnaCh
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MDS9651 MDS9651URH N-P Channel mosfet trench mosfet

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