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DSA00306364.pdf
by International Rectifier
Partial File Text
PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY D
...
IODE C Features · Low VCE (on) Non Punch Through IGBT Technology. · Low Diode VF. · 10µs Short
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Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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User Tagged Keywords
C-150
IRGIB15B60KD1P