DSA00306364.pdf by International Rectifier

Partial File Text PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features · Low VCE (on) Non Punch Through IGBT Technology. · Low Diode VF. · 10µs Short
Datasheet Type Original
RoHS No
Pb Free No
Lifecycle Transferred
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IRGIB15B60KD1PPBF

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