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    • GENERAL PURPOSE DUAL-GATE GaAs MESFET NE25339 FEATURES SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF (TYP) HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB T
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    NE25339
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