DSA00307475.pdf by International Rectifier

Partial File Text PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features · Low VCE (on) Non Punch Through IGBT Technology. · Low Diode VF. · 10µs Short
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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C-150 IRGIB10B60KD1P