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DSA0097432.pdf
Manufacturer
Fairchild Semiconductor
Partial File Text
TM QFET FQB3N60C 600V N-Channel MOSFET Features Description ยท 3A, 600V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fai
Datasheet Type
Original
ECAD Model
Part Details
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FQB3N60C
FQB3N60CTM
mosfet 600V 3A
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