DSA0097432.pdf by Fairchild Semiconductor

Partial File Text TM QFET FQB3N60C 600V N-Channel MOSFET Features Description · 3A, 600V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fai
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Pb Free Unknown
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FQB3N60C FQB3N60CTM mosfet 600V 3A