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Scans-0093713.pdf
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T O S H IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2SB1481 2SB1481 SWITCHING APPLICATIONS Unit in mm · · · High DC Current Gain : hFE = 2000 (Min.) (VCE= -2 V , IC= -1.5A ) Lo
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2SB1481
2SD2241
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