R1RW0416DGE-2PR datasheet by Renesas Technology

Description Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status: Remarks:
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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R1RW0416DGE-2PR datasheet preview Download Datasheet