PHKD3NQ10T,518 datasheet
by NXP Semiconductors
- Dual N-channel TrenchMOS transistor - Configuration: Dual N-channel ; I<sub>D</sub> DC: 2.2 A; Q<sub>gd</sub> (typ): 8 nC; R<sub>DS(on)</sub>: 90@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13"
- Original
- Yes
- Unknown
- Transferred
-
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