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PHB32N06LT
datasheet
by NXP Semiconductors
Description
PHB32N06LT - N-channel enhancement mode field effect transistor - Configuration: Single N-channel ; ID DC: 34 A; Qgd (typ): 8.5 nC; RDS(on): 37@10V40@5V mOhm; VDSmax: 60 V
Datasheet Type
Original
RoHS
Yes
Pb Free
Yes
Lifecycle
Transferred
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934056954118
PHB32N06LT,118
934056954118
PHB32N06LT
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