PHB18NQ10T,118 datasheet by NXP Semiconductors

Description N-channel TrenchMOS transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 18 A; Q<sub>gd</sub> (typ): 8 nC; R<sub>DS(on)</sub>: 90@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT404 (D2PAK); Container: Tape reel smd
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
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