MJ2955 datasheet by General Electric

Description Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115
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RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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