BLF6G22LS-100,112 datasheet
by NXP Semiconductors
- Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Blister pack
- Original
- Yes
- Unknown
- Transferred
- Find it at Findchips.com
