BLF6G20LS-110 datasheet by NXP Semiconductors

Description Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 19 dB
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Transferred
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Equivalent Parts !
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BLF6G20LS-110,118 934060896112 BLF6G20LS-110,112 934060896118 BLF6G20LS-110,118

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