BF1201WR,135 datasheet
- NXP Semiconductors
- N-channel dual-gate PoLo MOS-FETs - CIS TYP: 2.6 pF; COS: 0.9 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 11 to 19 mA; Noise figure: 1.9@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 10 V; Y<sub>FS</sub> min.: 23 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd
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